System for manufacturing microelectronic, microoptoelectronic or micromechanical devices

ABSTRACT

The specification teaches a system for manufacturing microelectronic, microoptoelectronic or micromechanical devices (microdevices) in which a contaminant absorption layer improves the life and operation of the microdevice. In an embodiment, a system for manufacturing the devices includes efficiently integrating a getter material in multiple microdevices.

CROSS-REFERENCE TO RELATED APPLICATIONS

This Patent Application is a Continuation of U.S. patent applicationSer. No. 10/201,657, filed Jul. 19, 2002 entitled SUPPORT FORMICROELECTRONIC, MICROOPTOELECTRONIC OR MICROMECHANICAL DEVICES, whichis related to U.S. patent application Ser. No. 10/211,426, filed Jul.19, 2002 entitled SUPPORT WITH INTEGRATED DEPOSIT OF GAS ABSORBINGMATERIAL FOR MANUFACTURING MICROELECTRONIC, MICROOPTOELECTRONIC ORMICROMECHANICAL DEVICES, which claim priority under 35 U.S.C. 119 toItalian Applications MI-2001-A-001558, filed Jul. 20, 2001 andMI-2002-A-000688 filed Apr. 3, 2002, all of which are incorporatedherein by reference.

BACKGROUND

The present invention relates to systems and apparatuses formanufacturing microelectronic, microoptoelectronic, or micromechanicaldevices.

Microelectronic devices (also called integrated electronic circuits, orICs) are the base of the integrated electronics industry.Microoptoelectronic devices comprise, for example, new generations ofinfrared radiation (IR) sensors which, unlike traditional ones, do notrequire cryogenic temperatures for their operation. These IR sensors areformed of an array of semiconductor material deposits, for examplesilicon, arranged in an evacuated chamber. Micromechanical devices(better known in the field under the definition “micromachines” orreferred herein as MMs) are being developed for applications such asminiaturized sensors or actuators. Typical examples of micromachines aremicroaccelerometers, which are used as sensors to activate automobileairbags; micromotors, having gears and sprocket wheels of the size of afew microns (μm); or optic switches, wherein a mirror surface with asize of the order of a few tens microns can be moved between twodifferent positions, directing a light beam along two differentdirections, one corresponding to the “on” condition and the other to the“off” condition of an optical circuit. In the following description,these devices will also all be referred to within the general definitionof solid-state devices.

ICs are manufactured by depositing layers of material with differentelectric (or magnetic) functionalities on a planar then selectivelyremoving them to create the device. The same techniques of depositionsand selective removal create microoptoelectronic or micromechanicaldevices as well. These devices are generally contained in housingsformed, in their turn, with the same techniques. The support mostcommonly used in these productions is a silicon “slice” (usuallyreferred to as a “wafer”), about 1 mm thick and with a diameter up to 30cm. On each of these wafers a very high number of devices may beconstructed. At the end of the manufacturing process, individualdevices, in the case of micromachines, or parts, in the case of IRsensors, are separated from the slices using mechanical or laser means.

The deposition steps are carried out with such techniques as, forexample, chemical deposition from vapor state, (“Chemical VaporDeposition” or “CVD”) and physical deposition from vapor state(“Physical Vapor Deposition” or “PVD”). The latter is commonly known inthe art as “sputtering.” Generally, selective removals are carried outthrough chemical or physical attacks using proper masking techniques.Such techniques are well-known in the field and will not be discussedhere except as they relate to specific embodiments of the invention.

The integrated circuits and the micromachines are then encapsulated inpolymeric, metallic or ceramic materials, essentially for mechanicalprotection, before being put to final use (within a computer, anautomobile, etc.). In contract, IR radiation sensors are generallyencapsulated in a chamber, facing one wall thereof, transparent to theIR radiation and known as a “window.”

In certain integrated circuits it is important to be able to control thegas diffusion in solid state devices. For example, in the case offerroelectric memories, hydrogen diffuses through device layers and canreach the ferroelectric material, which is generally a ceramic oxide,such as lead titanate-zirconate, strontium-bismuth tantalate ortitanate, or bismuth-lanthanum titanate. When the hydrogen reaches theferroelectric material, it can alter its correct functioning.

Still more important is gas control and elimination in IR sensors and inmicromachines. In the case of IR sensors, the gases which may be presentin the chamber can either absorb part of the radiation or transport heatby convection from the window to the array of silicon deposits, alteringthe correct measurement. In the case of micromachines, the mechanicalfriction between gas molecules and the moving part, due to the verysmall size of the latter, can lead to detectable deviations from thedevice's ideal operation. Moreover, polar molecules such as water cancause adhesion between the moving part and other parts, such as thesupport, thus causing the device's failure. In the IR sensors witharrays of silicon deposits or in the micromachines, it is thereforefundamental to ensure the housing remains in vacuum for the whole devicelife.

In order to minimize the gas amount in these devices, their productionis usually conducted in vacuum chambers and resorting to pumping stepsbefore the packaging. However, the problem is not completely solved bypumping because the same materials which form the devices can releasegases, or gases can permeate from outside during the device life.

To remove the gases entering in solid state devices during their lifethe use of materials that can sorb these destructive gases may behelpful. These absorptive materials are commonly referred to as“getters,” and are generally metals such as zirconium, titanium,vanadium, niobium or tantalum, or alloys thereof combined with othertransition elements, rare earths or aluminum. Such materials have astrong chemical affinity towards gases such as hydrogen, oxygen, water,carbon oxides and in some cases nitrogen. The absorptive materials alsoinclude the drier materials, which are specifically used for moistureabsorption, which usually include the oxides of alkali or alkaline-earthmetals. The use of materials for absorbing gases, particularly hydrogen,in ICs, is described for instance in U.S. Pat. No. 5,760,433 by Ramer etal. Ramer teaches that the chemically reactive getter material is formedas part of the process of fabricating the integrated circuit. The use ofgetters in IR sensors is described in U.S. Pat. No. 5,921,461 by Kennedyet al. Kennedy teaches that a getter is deposited onto preselectedregions of the interior of the package. Finally, the use of gasabsorbing materials in micromachines is described in the article “Vacuumpackaging for microsensors by glass-silicon anodic bonding” by H. Henmiet al., published in the technical journal Sensors and Actuators A, vol.43 (1994), at pages 243-248.

The above references teach that localized deposits of gas absorbingmaterials can be obtained by CVD or sputtering during solid-state deviceproduction steps. However, this procedure can be costly and timeconsuming if done during the solid-state manufacturing CVD or sputteringprocess. This is because gas absorbing material deposition during deviceproduction implies the step involved in localized deposition of the gasabsorbing or getter material. This is generally carried out through thesteps of resin deposition, resin local sensitization through exposure toradiation (generally UV), selective removal of the photosensitizedresin, gas absorbing material deposition and subsequent removal of theresin and of the absorbing material thereon deposed, leaving the gasabsorbing material deposit in the area in which the photosensitizedresin had been removed. Moreover, depositing the gas absorbing materialin the production line is disadvantageous because there are an increasednumber of steps required in the manufacturing process. Increasingdeposits, in turn, requires that more materials be used, which alsosignificantly increases the risk of “cross-contamination” among thedifferent chambers in which the different steps are carried out. Also,there is a possible increase of waste products because of contamination.

SUMMARY

In various embodiments, one or more of the above-described problems havebeen reduced or eliminated.

In a non-limiting embodiment, a system includes a support device withdiscrete deposits of contaminant removing material on a base layer of amaterial. The base layer of material may be selected from, by way ofexample but not limitation, glasses, ceramics, semiconductors, ormetals. The contaminant removing material may be selected from, by wayof example but not limitation, getter materials and drier materials.

In another non-limiting embodiment, a manufacturing layer may cover thecontaminant removing material. The manufacturing layer may include asubstrate layer. The substrate layer may be used in the manufacture of amicrodevice.

In another non-limiting embodiment, passages are formed in themanufacturing layer by removing selected portions of the manufacturinglayer. This may expose the contaminant removing material to atmosphere.The passages may or may not create cavities.

In another non-limiting embodiment, the system may include operationalparts formed in one or more of the cavities by removing selectedportions of said manufacturing layer. According to this embodiment, whenoperationally configured, the support device covers the operationalparts.

In another non-limiting embodiment, the support layer may be placed instorage container including an inert atmosphere. This enables thesupport layer to be stored in the inert atmosphere of the storagecontainer prior to use.

In another non-limiting embodiment, the contaminant removing material isformed to a thickness of between about 0.1 to 5 μm. In yet anotherembodiment, the manufacturing layer is formed to a thickness of betweenabout 1 to 20 μm.

An alternative non-limiting embodiment includes a compound structure forproviding multiple microdevices. In an embodiment, the compoundstructure may include a first base and a second base. The first base mayinclude a plurality of microdevice bases, where each microdevice base isprovided with at least one component. The second base, juxtaposed withthe first base when in an operational configuration, may include aplurality of covers having recesses and getter material. The gettermaterial may be formed within the recesses of the plurality of covers.Two or more of the plurality of covers may be juxtaposed over two ormore of the plurality of microdevice bases. In another embodiment, aplurality of microdevices each comprising one or more of the microdevicebases, one or more of the covers, and the at least one component areseparable from the compound structure.

In another non-limiting embodiment, the first base further includes atleast one hollow formed therein. In another embodiment, at least onecomponent is formed in the hollow. In an alternative embodiment, thesecond base further includes at least one hollow formed therein. Inanother embodiment, the getter material is formed in the hollow.

In another non-limiting embodiment, a cavity is at least partiallydefined by the first base and the second base. When operationallyconfigured, the at least one component and the getter material may beexposed to an atmospheric environment of the cavity.

In another non-limiting embodiment, a layer is formed on the secondbase. In an embodiment, the layer includes material compatible with theproduction of microelectronic or micromechanical devices or partsthereof In another embodiment, passages in the layer may facilitateatmospheric contact between the getter material and an atmosphericenvironment of the at least one component.

In another non-limiting embodiment, the getter material is formed to athickness of between about 0.1 to 5 μm. In yet another embodiment, theproduction process layer is formed to a thickness of between about 1 to20 μm.

In an alternative non-limiting embodiment, an apparatus includes a baseand a production process-compatible layer. In an embodiment, the basemay include a plurality of covers. In another embodiment, each cover maybe provided with a recess holding a getter. In another embodiment, theproduction process-compatible layer may be formed on the base. Theproduction process layer may include a material compatible with theproduction of microelectronic or micromechanical devices or partsthereof The base may or may not be provided to a production process inwhich passages are formed in the production process-compatible layer.

In another non-limiting embodiment, the base may further include atleast one hollow formed therein. At least one component may be formed inthe at least one hollow.

In another non-limiting embodiment, passages formed in the productionprocess-compatible layer during the production process may facilitateatmospheric contact between the getter and a hermetically isolatedatmospheric environment at least partially contained in the recess andincluding at least one component. In another embodiment, passages formedin the production process-compatible layer may facilitate contactbetween the getter and an atmospheric environment of a microdevicecomponent.

In another non-limiting embodiment, the getter may be formed in eachcover of the base. In another embodiment, the getter may be formed to athickness of between about 0.1 to 5 μm. In another embodiment, theproduction process-compatible layer may be formed to a thickness ofbetween about 1 to 20 μm.

In another non-limiting embodiment, a second base includes a pluralityof microdevice bases. In an embodiment, each microdevice base may beprovided with at least one component of a microdevice. In an embodiment,when the first base is engaged with the second base the component of themicrodevice is located within a cavity at least partially defined by therecess holding the getter.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the invention are illustrated in the figures. However,the embodiments and figures are illustrative rather than limiting; theyprovide examples of the invention.

FIG. 1 shows in perspective, partially in section, a first embodiment ofthe invention.

FIG. 2 shows a sectional view of the support in FIG. 1.

FIGS. 3-5 represent operative phases for constructing a solid-statedevice starting from the support of FIG. 1.

FIG. 6 shows in perspective, partially in section, a second possiblesupport according to the invention.

FIG. 7 shows a sectional view of support in FIG. 6.

FIG. 8 represents a solid-state device obtainable from support of FIG.6.

FIG. 9 shows a sectional view of another solid state-device constructedstarting from the support of FIG. 6.

In the figures, similar reference numerals may denote similarcomponents.

DETAILED DESCRIPTION

For the sake of description clarity, in the drawings height-diameterratio of supports of the invention and lateral dimensions of gasabsorbing material deposits upon the base are exaggerated with respectto real dimensions. Moreover, in the drawings, supports are alwaysrepresented with a wafer geometry, that is a low disk of material,because this is the geometry commonly adopted by the producers of solidstate devices, but this geometry could be also different, for examplesquare or rectangular.

In FIG. 1 is shown a partial sectional view of a support 10 according toa first embodiment of the invention. Said support, 10, comprises a base,11, having the only function of backing the support and devices derivingtherefrom, and constitutes nearly the whole thickness of support 10(within the range of millimeters). Base material can be a metal, aceramic, a glass or a semiconductor, preferably silicon.

In areas 12, 12′, . . . , of the surface of base layer 11, discretedeposits 13, 13′, . . . of a contaminant removing material (alsoreferred to as gas absorbing material) are obtained. Then these depositsare covered with a layer 14 of a material compatible with ICs or MMsproduction process. The covering layer 14 can act as the anchor forlayers subsequently deposed thereon to construct ICs,microoptoelectronic devices or MMs. In a preferred embodiment thecovering layer can be even itself the layer in which these devices areconstructed (for example the moving parts of micromachines can beobtained in this layer by removing parts of it). Moreover the finaldevice's soldering can be possibly made directly on the edge of coveringlayer 14.

As shown in FIG. 2, in covering layer 14, in correspondence of deposits13, 13′, . . . , are realized passages 15, 15′, . . . , having functionof exposing the gas absorbing or contaminant removing material 13, 13′,. . . to the atmosphere surrounding support 10. Passages 15, 15′, . . ., can be made by selective removal of covering layer 14 upon deposits13, 13′, . . . , through removing techniques that are known by thoseskilled in the art.

The gas absorbing material utilized for deposits 13, 13′, . . . can beany material free from the phenomenon of lost (or losing) particles,chosen among materials commonly called getter materials, which arecapable of absorbing various gas molecules, and drier materials, whichare specifically used for the absorption of water vapor.

In one embodiment of the invention a getter material may be used as acontaminant removing material. The getter material can be a metal suchas Zr, Ti, Nb, Ta, V; an alloy of these metals or among one or more ofthese elements and additional element(s), preferably chosen from Cr, Mn,Fe, Co, Ni, Al, Y, La and rare-earths, like binary alloys Ti—V, Zr—V,Zr—Fe and Zr—Ni, ternary alloys like Zr—Mn—Fe or Zr—V—Fe, or alloys withmore components. In a preferred embodiment of the invention, gettermaterials are titanium, zirconium, the alloy of weight percentagecomposition Zr 84%-Al 16%, produced and sold by the Applicant under thetrade name St 101®, the alloy of weight percentage composition Zr 70%-V24.6%-Fe 5.4%, produced and sold by the Applicant under the trade nameSt 707® and the alloy of weight percentage composition Zr 80.8%-Co14.2%-TR 5% (wherein TR stands for a rare-earth, yttrium, lanthanum ormixtures thereof), produced and sold by the Applicant under the tradename St 787®. In case the getter material is not completely free of the“lost particles” phenomenon, it can be properly treated so as to reduceor eliminate this phenomenon, through a partial sintering or annealingtreatment or other techniques which are appreciated by those skilled inthe art.

In another embodiment of the invention, drier materials are used for thecontaminant-removing material 13, 13′, . . . . In the case of the driermaterials, these are preferably chosen among the oxides of alkali oralkaline-earth metals. Calcium oxide, CaO, is used in a preferredembodiment, because it does not pose safety or environmental problemsduring production, use or disposal of devices containing it. An oxidelayer may be obtained, for instance through the so-called “reactivesputtering” technique, depositing the alkali or alkaline-earth metalunder an atmosphere of a rare gas (generally argon) in which a lowpercentage of oxygen is present, so that the metal is converted to itsoxide during deposition. These layers are generally compact and freefrom the problem of lost particles. In a preferred embodiment, there isonly getter material, but in alternate embodiments there are getter anddrier materials or just drier materials.

Deposits 13, 13′, . . . , can be obtained through known techniques ofselective deposition, and have thickness in the range between about 0.1and 5 μm: with thickness values lower than the indicated ones, gassorption capability is excessively reduced, while with higher thicknessvalues deposition times are extended without any real advantages on thesorption properties of the contaminant removing materials. Thesedeposits have lateral dimensions variable within wide ranges and dependon the intended use of a completed device. For example, if utilizationis expected in ICs, lateral dimension will be within the range of a fewmicrons or less, while in the case of MMs, dimensions can be between afew tens and a couple thousands of microns.

Material constituting layer 14 is one of the materials normally used assubstrate in solid state devices production; it can be a so-called“III-V material” (for example, GaAs, GaN, or InP), or silicon in apreferred embodiment. Covering layer 14 can be obtained by sputtering,epitaxy, CVD or by others techniques known to those skilled in the art.It has a variable thickness, which is generally lower than 60 μm inareas free from deposits 13, 13′, . . . , and preferably within therange of about 1-20μm.

In order to help adhesion, covering layer 14 is may be made from thesame material as base 11. In a preferred embodiment the combination issilicon (mono- or polycrystalline) for base 11, and silicon grown byepitaxy for layer 14. However, those skilled in the are wouldappreciated that other materials with similar adhesion properties couldbe used as well and that the base and adhesion layer do not need to bemade from the same material in an alternate embodiment.

The upper surface of covering layer 14 can also be treated by modifyingits chemical composition, for example forming an oxide or a nitride,allowing the following operations included in device production tooccur.

Various embodiments can therefore be used in the production ofsolid-state devices of every kind. In completed devices which are readyfor utilization or commercialization, deposits of gas absorbing materialare “uncovered,” that is, exposed to external atmosphere. To avoid therisk of excessive passivation and damaging of the absorbing orcontaminant-removing material, it is preferable to keep devices insideboxes under inert atmosphere, for instance argon or dry nitrogen, aswould be appreciated by those skilled in the art.

FIGS. 3-5 show a possible implementation of an embodiment of theinvention, where the support 10 is used in solid-state deviceproduction, particularly micromachine production. However, the samesupport could be utilized for manufacturing other solid-state devices,such as integrated circuits or miniature IR sensors.

Upon areas of surface of layer 14 without passages 15, 15′, . . . , aremanufactured structures comprising micromachine mobile parts, labelledas elements 30, 30′, . . . in FIG. 3. When the production for structures30, 30′, . . . (including contacts for outside electric connection ofevery single micromachine, not shown in the drawing) is finished, acovering element 40 is placed over support 10, as shown in section inFIG. 4. This covering element 40 is generally constructed with the samematerials as the base 11 and it has to be easily fixable to layer 14.Silicon is used in a preferred embodiment. The covering element 40 canhave holes, 41, 41′, . . . , in correspondence with areas wherein, onsupport 10, structures 30, 30′, . . . , are obtained and deposits 13,13′, . . . , of gas absorbing material are exposed. In particular eachof said holes will be so wide that, when support 10 and covering element40 are fixed together, a space 42, 42′, . . . , is obtained wherein astructure like 30, 30′, . . . , and a passage 15, 15′, . . . , givingaccess to the gas absorbing material, are contained, so that this latteris in direct contact with space 42, 42′, . . . , and is able to sorb gaspossibly present or released during time in said space. Finally, singlemicromachines, as the one represented in FIG. 5, are obtained by cuttingthe whole made up of support 10 and covering element 40 along theiradhesion areas.

FIGS. 6 and 7 show, partially in section, a second possible embodimentof the invention. Also in this embodiment the support 60 includes a base61 of the same kind and dimensions of base 11 previously described, butin which hollows 65, 65′, . . . , are created in localized areas 62,62′, . . . , and fitted to contain gas absorbing material deposits 63,63′, . . . . Because of the hollows configuration, the base 61 in thisembodiment can substitute the assembly made up of base 11 and layer 14in the embodiment described above.

FIG. 8 represents a solid-state device 80, in particular a micromachine,which can be obtained from the support of an alternate embodiment of theinvention 60 of FIGS. 6 and 7, through a process similar to the onedescribed with reference to FIGS. 3-5 and utilizing a covering element70 provided with holes 71, 71′, . . . , in correspondence with areaswherein, on support 60, structures 72, 72′, . . . , are disposed and gasabsorbing material deposits 63, 63′, . . . , are exposed.

In another alternate embodiment as shown in FIG. 9, micromachine 90 usesthe support 60 as a covering element of a solid-state device instead ofas base. In this embodiment, the base on which micromachine isconstructed is a traditional one as is known by those skilled in theart, without gas absorbing material deposits. The hollow 65 obtainedinside base 61, forms thus a space for housing the mobile structure 91and, at the same time, creates the passage 64) giving access to gasabsorbing material.

The invention is applicable to microdevices of any type which canbenefit from an internally deposed gettering layer as defined by theinvention. A microdevice is described as any of microelectronic,microoptoelectronic, or micromechanical device. However, any small-scaledevice which requires purification for contaminants which passes throughchannels cut into the substrate layer, which allow deposits ofcontaminant removing material to capture contaminants will benefit fromthe scope and spirit of the invention and the invention should not belimited to only the three types of applications recited, but rather bedefined by the claims below.

It will be appreciated to those skilled in the art that the precedingexamples and preferred embodiments are exemplary and not limiting to thescope of the present invention. It is intended that all permutations,enhancements, equivalents, and improvements thereto that are apparent tothose skilled in the art upon a reading of the specification and a studyof the drawings are included within the true spirit and scope of thepresent invention.

1. A system comprising: a support device including discrete deposits ofcontaminant removing material on a base layer of a material selectedfrom the group consisting essentially of glasses, ceramics,semiconductors and metals, wherein said contaminant removing material isselected among the group of materials consisting essentially of gettermaterials and drier materials; and a manufacturing layer covering saidcontaminant removing material, wherein said manufacturing layer includesa substrate layer which may be used in the manufacture of a microdevice;and passages formed in said manufacturing layer by removing selectedportions of said manufacturing layer, such that said contaminantremoving material is exposed to atmosphere, wherein said passages createcavities.
 2. The system of claim 1 further comprising operational partsformed in one or more of the cavities by removing selected portions ofsaid manufacturing layer, wherein, when operationally configured, thesupport device covers said operational parts.
 3. The system of claim 1further comprising a storage container including an inert atmosphere,wherein said covered support device is stored in the inert atmosphere ofthe storage container prior to use.
 4. The system of claim 1, whereinthe contaminant removing material is formed to a thickness of betweenabout 0.1 to 5 μm.
 5. The apparatus of claim 1, wherein themanufacturing layer is formed to a thickness of between about 1 to 20μm.
 6. A compound structure for providing multiple microdevicescomprising: a first base structure, including a plurality of microdevicebases, where each microdevice base is provided with at least onecomponent; a second base structure, juxtaposed with the first basestructure, including: a plurality of covers having recesses; gettermaterial formed in the recesses of the plurality of covers, wherein twoor more of the plurality of covers are juxtaposed over two or more ofthe plurality of microdevice bases; wherein a plurality of microdeviceseach comprising one or more of the microdevice bases, one or more of thecovers, and the at least one component are separable from the compoundstructure.
 7. The structure of claim 6, wherein the first base structurefurther includes at least one hollow formed therein, wherein the atleast one component is formed in the at least one hollow.
 8. Thestructure of claim 6, wherein the second base structure further includesat least one hollow formed therein, wherein the getter material isformed in the at least one hollow.
 9. The structure of claim 6, whereina cavity is at least partially defined by the first base structure andthe second base structure, and wherein, when operationally configured,the at least one component and the getter material are exposed to anatmospheric environment of the cavity.
 10. The structure of claim 6,further comprising a layer, including material compatible with theproduction of microelectronic or micromechanical devices or partsthereof, formed on the second base structure, wherein passages in thelayer facilitate atmospheric contact between the getter material and anatmospheric environment of the at least one component.
 11. The structureof claim 6, wherein the getter material is formed to a thickness ofbetween about 0.1 to 5 μm.
 12. The structure of claim 6, wherein theproduction process layer is formed to a thickness of between about 1 to20 μm.
 13. An apparatus comprising: a base structure, including aplurality of covers, where each cover is provided with a recessreceptive to a getter; a production process-compatible layer, of amaterial compatible with the production of microelectronic ormicromechanical devices or parts thereof, formed on the base structure;wherein the base structure is provided to a production process in whichpassages are formed in the production process-compatible layer.
 14. Thestructure of claim 13, wherein the base structure further includes atleast one hollow formed therein, wherein at least one component isformed in the at least one hollow.
 15. The structure of claim 13,wherein passages formed in the production process-compatible layerduring the production process facilitate atmospheric contact between thegetter and a hermetically isolated atmospheric environment at leastpartially contained in the recess and including at least one component.16. The apparatus of claim 13, wherein passages formed in the productionprocess-compatible layer facilitate contact between the getter and anatmospheric environment of a microdevice component.
 17. The apparatus ofclaim 13, wherein the getter is formed in each cover of the basestructure.
 18. The apparatus of claim 13, wherein the getter is formedto a thickness of between about 0.1 to 5 μm.
 19. The apparatus of claim13, wherein the production process-compatible layer is formed to athickness of between about 1 to 20 μm.
 20. The apparatus of claim 13,wherein the base structure is a first base structure, further comprisinga second base structure, including a plurality of microdevice bases,where each microdevice base is provided with at least one component of amicrodevice, wherein when the first base structure is engaged with thesecond base structure the component of the microdevice is located withina cavity at least partially defined by the recess receptive to thegetter.